The Toshiba 2SK1120 is a high‑speed, high‑current N‑channel MOSFET designed for industrial applications such as DC‑DC converters and motor drives. The document lists its maximum ratings, electrical characteristics, and thermal data, and includes handling precautions for this electrostatic‑sensitive device.
Key specifications include a 1000 V drain‑source voltage rating, typical on‑resistance of 1.5 mΩ, and a maximum drain current of 2 A. Thermal resistance values, leakage currents, and gate charge parameters are also provided, along with recommended operating temperature ranges and storage limits.
| Drain‑Source Voltage (VDS) | 1000 V |
|---|---|
| Drain Current (ID) | 2 A |
| On‑Resistance (RDS(on)) | 1.5 mΩ (typ.) |
| Gate Threshold Voltage (Vth) | 1.5 ~ 3.5 V |
| Maximum Channel Temperature | 150 °C |
The device is rated for a maximum drain‑source voltage of 1000 V.
Typical on‑resistance is 1.5 mΩ.
It is an electrostatic‑sensitive device; handle with caution.