The 2SK1113 is a silicon N‑channel MOSFET designed for high‑speed, high‑current switching applications such as DC‑DC converters and motor drives. It features low on‑resistance, high forward transconductance, and a robust voltage rating.
The document provides detailed electrical parameters, thermal resistance data, and maximum ratings, along with recommended operating conditions and handling precautions for the MOSFET. This manual is written in Japanese.
| Drain‑Source Voltage (V_DSS) | 120 V |
|---|---|
| On‑Resistance (R_DS(on)) | 0.33 mΩ |
| Maximum Drain Current (I_D) | 15 A |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 12.5 °C/W |
| Operating Temperature Range | -55 °C to 150 °C |
| Input Capacitance (Ciss) | 155 pF |
| Output Capacitance (Coss) | 155 pF |
The maximum drain‑source voltage is 120 V.
The typical on‑resistance is 0.33 mΩ.
It can operate from –55 °C up to 150 °C.