This is an article about 2SK1118 electronic components suppliers
The 2SK1118 is an N‑channel MOSFET designed for high‑speed, high‑current DC‑DC converter, relay drive, and motor drive applications. The document lists its key features such as a 4‑V gate‑drive capability, low on‑resistance, and high forward transfer admittance.
Detailed specifications include absolute maximum ratings, thermal characteristics, electrical characteristics, source‑drain diode ratings, and a safe operating area chart. Handling precautions note that the device is electrostatic‑sensitive and must be protected during assembly.
| Drain‑Source Voltage (VDS) | 600 V |
|---|---|
| Continuous Drain Current (ID) | 6 A |
| Gate Threshold Voltage (VTH) typical | 15‑35 V |
The maximum drain‑source voltage is 600 V.
The gate threshold voltage typically ranges from 15 V to 35 V.
The device can handle a continuous drain current of 6 A.