The Toshiba 2SK1119 is a high‑speed, high‑current N‑channel MOSFET designed for DC‑DC converters, motor drives, and other industrial switching applications. The device is electrostatic‑sensitive and must be handled with caution.
The datasheet provides maximum ratings such as a 1000 V drain‑source voltage, typical on‑resistance of 3.02 mΩ, and a maximum leakage current of 300 µA. Thermal characteristics include a channel‑to‑case resistance of 1.25 °C/W and a typical weight of 2.0 g.
| Drain‑Source Voltage (VDS) | 1000 V |
|---|---|
| On‑Resistance (RDS(on)) | 3.02 mΩ (typ.) |
| Leakage Current (IGSS) | 300 µA (max) |
| Gate Threshold Voltage (Vth) | 1.5 V – 3.5 V |
| Thermal Resistance, Channel‑to‑Case (RθJC) | 1.25 °C/W |
| Weight | 2.0 g (typ.) |
The device can withstand up to 1000 V drain‑source voltage.
Its typical on‑resistance is 3.02 mΩ.
The maximum leakage current is 300 µA.
It is an electrostatic‑sensitive device and should be handled with caution.