This document describes the features and applications of the DTB523YE / DTB523YM digital transistors produced by ROHM. It provides information on the dimensions and structure of the product. The product has the characteristics of low VCE (sat) and built-in resistors, and is suitable for applications such as inverters, interfaces, and drivers.
The DTB523YE and DTB523YM are low‑VCE(sat) PNP digital transistors with integrated thin‑film bias resistors, intended for inverter, interface and driver circuits. Their built‑in resistors simplify circuit design by eliminating the need for external input resistors.
Key features include a lower saturation voltage than conventional devices, complete isolation of the bias resistors, and reduced parasitic effects. The datasheet lists the EMT3 and VMT3 surface‑mount packages, absolute maximum ratings, and detailed electrical characteristics such as collector current, power dissipation, and transition frequency.
| Maximum collector current (Ic) | 500 mA |
|---|---|
| Power dissipation (Pp) | 150 mW |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range (Tstg) | -55 °C to +150 °C |
| Transition frequency (fT) | 260 MHz |
They are suitable for inverter, interface, and driver circuits.
The maximum collector current is 500 mA.
The devices can be stored from –55 °C up to +150 °C.