DTB743XE / DTB743XM is a low VCE(sat) digital transistor with a rated current of 200mA / -30V and a storage temperature of -55 to +150°C. It features a lower VCE(sat) than conventional products and built-in bias resistors that allow inverter circuits to be configured without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and they also have the advantage of almost completely eliminating parasitic effects. In addition, only the on/off conditions need to be set for operation, making the device design easy.
The DTB743XE/DTB743XM are low‑VCE(sat) digital transistors that incorporate thin‑film bias resistors on each lead. The built‑in resistors simplify circuit design by eliminating the need for external bias components and reducing parasitic effects.
These devices are intended for use in inverter, interface, and driver circuits and are suitable for a wide range of electronic equipment such as audio‑visual gear, office automation, communications devices, and consumer electronics. Design engineers should observe the specified temperature and voltage limits and consider derating for high‑reliability applications.
| Supply voltage (VEE) | -30 V |
|---|---|
| Input voltage (Vin) | -20 V to +7 V |
| Junction temperature (Tj) | 150 °C |
| Storage temperature (Tstg) | -55 °C to +150 °C |
| Transition frequency (ft) | 260 MHz |
| Input resistance (Ri) | 3.29 kΩ (typ) |
| Resistance ratio (Ra/Rt) | 17 |
Storage temperature is specified from -55 °C to +150 °C, and the maximum junction temperature is 150 °C.