DTB543EE / DTB543EM is a digital transistor launched by Toshiba. Its characteristic is that VCE (sat) is lower than traditional products. Built-in bias resistors can configure an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.
The DTB543EE and DTB543EM are low VCE(sat) PNP epitaxial planar silicon transistors that incorporate thin‑film bias resistors. The built‑in resistors simplify inverter, interface, and driver circuit designs by eliminating the need for external input resistors and reducing parasitic effects.
The document lists absolute maximum ratings, packaging specifications, and detailed electrical characteristics such as supply voltage range, collector current, power dissipation, and junction temperature limits. Application notes and usage warnings are also included to guide designers in safe and reliable implementation.
| Supply voltage (VCC) range | -12 V to +10 V |
|---|---|
| Maximum power dissipation | 150 mW |
| Junction temperature range | -55 °C to +150 °C |
| Built‑in bias resistors | Thin‑film resistors with complete isolation |
The devices operate with a supply voltage (VCC) from –12 V up to +10 V.
Yes, they have built‑in thin‑film bias resistors that allow inverter circuits without external resistors.
The maximum power dissipation is 150 mW.