DTB543ZE / DTB543ZM is a low VCE (sat) digital transistor from Toshiba with built-in bias resistors.
The DTB543ZE is a low VCE(sat) digital transistor featuring built‑in bias resistors that simplify inverter circuit design by eliminating the need for external input resistors. It is offered in a thin‑film, epitaxial planar silicon package with dimensions and packaging types (EMT3, VMT3) suitable for compact designs.
Typical applications include inverter, interface, and driver circuits. The document lists absolute maximum ratings, electrical characteristics such as collector current up to 500 mA, power dissipation of 150 mW, and a DC current gain of 140, along with recommended operating conditions and safety notes.
| Collector current (Ic max) | 500 mA |
|---|---|
| Power dissipation (P_D) | 150 mW |
| Junction temperature (Tj) | 150 °C |
| Storage temperature (Tstg) | -55 °C to +150 °C |
| Supply voltage (VCC) | -12 V |
| DC current gain (hFE) | 140 |
| Transition frequency (f_T) | 260 MHz |
| Input resistance (R_i) typical | 4.7 kΩ |
| Package type | EMT3, VMT3 |
The maximum collector current is 500 mA.
The device can dissipate up to 150 mW.
Typical applications include inverter, interface, and driver circuits.