DTB723YE / DTB723YM is a digital transistor product from ROHM, which has low VCE (sat) characteristics and can be applied to inverter, interface, driver and other scenarios.
The DTB723YE and DTB723YM are low‑VEE (sat) digital transistors with built‑in bias resistors, intended for inverter, interface and driver applications. Their thin‑film resistors offer isolation and minimize parasitic effects, simplifying circuit design.
Key features include a low saturation voltage, integrated bias resistors, and a PNP epitaxial planar silicon structure. The devices are supplied in EMT3 and VMT3 packages with standard tape‑and‑reel handling.
| Maximum collector current | 200 mA |
|---|---|
| Junction temperature (Tj) | 150 °C |
| Input resistance (R_i) | 1.54 kΩ (typical) |
The maximum collector current is 200 mA.