DTB713ZE / DTB713ZM is a digital transistor from ROHM that features low VCE (sat) and can be used in inverters, interfaces, and drivers.
The datasheet introduces the ROHM DTB713ZE and DTB713ZM low‑VEE digital transistors with built‑in bias resistors, intended for inverter, interface and driver applications.
It describes key features such as low saturation voltage, integrated thin‑film resistors that minimise parasitic effects, and provides full electrical characteristics, packaging specifications and absolute maximum ratings.
| Maximum collector current (Ic) | 200 mA |
|---|---|
| Power dissipation | 150 mW |
| Junction temperature (Tj) max | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Transition frequency (fT) | 260 MHz |
| DC current gain (hFE) | 140 |
| Input resistance (Ri) | 0.7 – 1.3 kΩ |
| Supply voltage (VCE) | -30 V |
| Input voltage (Vin) range | -10 V to 45 V |
They enable an inverter circuit to be built without external input resistors, reducing parasitic effects.
The devices are available in EMT3 (SOT‑416) and VMT3 (taping) packages.
The maximum collector current is 200 mA.