DTB113EK is a digital transistor launched by ROHM. It is packaged in SMT3 and has built-in resistors. It is applied in inverters, interfaces, and drivers.
The ROHM DTB113EK is a -500 mA / -50 V digital PNP transistor with built‑in thin‑film bias resistors, allowing inverter or driver circuits without external resistors. It is fabricated as an epitaxial planar silicon device and packaged in an SMT3 (SC‑59) surface‑mount package.
The datasheet lists key specifications such as a 50 V supply rating, 500 mA output current, 200 MHz transition frequency and a DC current gain of 33. Application notes describe typical inverter and driver circuits and include warnings that the part is not radiation tolerant or intended for safety‑critical systems.
| Supply voltage (VEO) | 50 V |
|---|---|
| Input voltage (VIN) | -10 to +10 V |
| Output current (IC) | 500 mA |
| Power dissipation (Pp) | 200 mW |
| Junction temperature (Tj) | 150 °C |
| Storage temperature (Tstg) | -55 to +150 °C |
| Input resistance (Ri) | 0.7 – 1.3 kΩ |
| Resistance ratio (Re/Ri) | 0.8 – 1.2 |
The maximum supply voltage is 50 V.
It is supplied in an SMT3 (SC‑59) surface‑mount package.
No, the device is not designed to be radiation tolerant.