The 2SD1781K Transistors is a medium power transistor with a rated voltage of 32V and a current of 0.8A. This transistor has a very low VCE(sat), typical value of -0.1V(IC / IB= 500mA / 50mA), high current capacity and compact package.
This document describes the ROHM 2SD1781K medium‑power NPN transistor. It lists key features such as very low VCE(sat) and high current capacity, and details the planar epitaxial structure. The datasheet includes absolute maximum ratings, electrical characteristics, and packaging specifications.
Additional sections present characteristic curves, external dimensions, and legal notes about usage, export control, and reproduction restrictions. The information is intended for designers integrating the transistor into circuits such as audio‑visual, office‑automation, and communication equipment.
| Collector‑base voltage (Vcbo) | 40 V |
|---|---|
| Collector‑emitter voltage (Vceo) | 32 V |
| Emitter‑base voltage (Vebo) | 5 V |
| Collector current (Ic) (pulse) | 1.5 A |
| Collector power dissipation (Pc) | 200 mW |
| Junction temperature (Tj) | 150 °C |
| Storage temperature (Ts) | -55 to +150 °C |
| Transition frequency (ft) | 150 MHz |
| Output capacitance (Cob) | 15 pF |
The maximum collector‑emitter voltage is 32 V.
It is supplied in an SMT3 (SC‑59) surface‑mount package.
The collector‑base breakdown voltage is specified as 40 V.
The transition frequency (ft) is 150 MHz.