2SD1782K is a ROHM NPN silicon transistor that features a low VCE(sat) and a high VCEO, making it suitable for 80V power circuits.
This document describes the ROHM 2SD1782K NPN power transistor. It lists key features such as low VCE(sat) of 0.2 V (typ.) and a collector‑emitter voltage rating of 80 V. The datasheet includes absolute maximum ratings, electrical characteristics at 25 °C, and typical performance curves.
Additional sections cover external dimensions, packaging specifications, and application notes. An appendix contains legal notices, export‑control information, and usage cautions for high‑reliability applications.
| Collector‑emitter voltage (VCEo) | 80 V |
|---|---|
| Collector current (Ic) | 0.5 A |
| Power dissipation (P0) | 0.2 W |
| Junction temperature (Tj) | 150 °C |
| Storage temperature (Tstg) | -55 to +150 °C |
| Transition frequency (fT) | 120 MHz |
The maximum collector‑emitter voltage is 80 V.
The transistor is rated for a collector current of 0.5 A.
The transition frequency is specified as 120 MHz.