This document introduces the 2SD1898 and 2SD1733 power transistors from ROHM. These transistors have high VCEO and IC, good hFE linearity, and low VCE (sat). They are suitable for various applications.
This datasheet describes ROHM's 2SD1898 and 2SD1733 NPN silicon power transistors. It includes key features, absolute maximum ratings, detailed electrical characteristics, and packaging specifications, along with characteristic curves and safety notices.
The document also outlines typical application guidance, storage and handling limits, and legal notices regarding use, export, and liability. It is intended for designers of general‑use electronic equipment such as audio‑visual, office, communication, and consumer devices.
| Collector‑emitter voltage (Vceo) | 80 V |
|---|---|
| Collector‑base voltage (Vcso) | 120 V |
| Emitter‑base voltage (Veso) | 5 V |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
The maximum collector‑emitter voltage is 80 V.
The transistors may be stored from –55 °C up to +150 °C.