This document introduces a power transistor product from ROHM, with the model 2SD1918 / 2SD1857A. The features include high breakdown voltage, low collector output capacitance, and high transition frequency. It complements the 2SB1275.
This datasheet describes the ROHM 2SD1818/2SD1857A power transistor, a 160 V, 1.5 A semiconductor device. It lists key features, absolute maximum ratings, electrical characteristics, and packaging specifications.
The document also includes characteristic curves, safe‑operating‑area graphs, and legal notices. It is intended for designers of audio‑visual, office‑automation, communication, and other electronic equipment who need detailed transistor parameters.
| Collector‑base breakdown voltage (BVcso) | 160 V |
|---|---|
| Collector‑emitter breakdown voltage (BVcea) | 160 V |
| Emitter‑base breakdown voltage (BVee0) | 5 V |
| Transition frequency (ft) | 80 MHz |
| Output capacitance (Cob) | 20 pF (VCE=10 V) |
The transistor is rated for a continuous collector current of 1.5 A and a pulse current of up to 3 A.
The packaging specification lists 2,500 pieces per reel.