The 2SD2114K is a NPN type medium power transistor from ROHM, with a high DC current gain, high emitter-base voltage and low VCE(sat) characteristics
The 2SD2114K is a high‑current gain medium‑power NPN silicon transistor designed for applications requiring up to 20 V collector‑emitter voltage and 0.5 A continuous collector current. The datasheet lists its absolute maximum ratings, electrical characteristics, and typical performance curves.
Key specifications include a typical DC current gain of 1200, a saturation voltage VCE(sat) of 0.18 V (typical) at 500 mA/20 mA, and a maximum pulse collector current of 1 A. Packaging information, ordering codes, and recommended operating conditions are also provided.
| Collector‑emitter voltage (VCEo) | 20 V (max) |
|---|---|
| Collector‑emitter saturation voltage (VCE(sat)) | 0.18 V (typ) |
| DC current gain (hFE) | 1200 (typ) |
| Maximum pulse collector current | 1 A (pulse) |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
The maximum collector‑emitter voltage is 20 V.
The typical VCE(sat) is 0.18 V.
The typical DC current gain is 1200.
The recommended storage temperature range is –55 °C to +150 °C.