2SD1980 is a power transistor from ROHM. It has a maximum collector-emitter voltage of 100V and a maximum collector current of 2A. 2SD1980 features high DC current gain, built-in base-emitter resistor and built-in damper diode. 2SD1980 complements the 2SB1316.
The 2SD1980 is a Darlington‑connected power transistor designed for high DC current gain, featuring a built‑in base‑emitter resistor and damper diode. It is intended for use in general‑purpose electronic equipment such as audio‑visual, office‑automation, and communication devices.
The datasheet lists absolute maximum ratings, electrical characteristics, and packaging information, including voltage limits, power dissipation, temperature ranges, and typical application curves. It also contains legal notices and contact information for ROHM.
| Collector‑emitter voltage (VCEO) | 100 V |
|---|---|
| Power dissipation (P) | 10 W (Tj=25 °C) |
| Storage temperature (Tstg) | -55 °C to +150 °C |
| Transition frequency (fT) | 80 MHz |
The maximum collector‑emitter voltage is 100 V.
The device can dissipate up to 10 W at a junction temperature of 25 °C.
The specified storage temperature range is –55 °C to +150 °C.