2SB1710 is a NPN type medium power transistor produced by Toshiba. It is mainly used in low frequency amplifier and driver circuits. This transistor has a large current gain and a low collector saturation voltage, which can meet the needs of various low frequency amplifiers and driver circuits.
The 2SB1710 is a general‑purpose amplification transistor designed for low‑frequency amplifier and driver applications. It offers a large collector current and low collector‑saturation voltage.
The document lists absolute maximum ratings, detailed electrical characteristics, external package dimensions, and a series of characteristic curves that illustrate gain, saturation voltage, switching time, and capacitance behavior under various test conditions.
| Collector‑emitter saturation voltage (VCE(sat)) | ≤ 350 mV at IC = -500 mA, IB = -25 mA |
|---|---|
| DC current gain (hFE) | 270 – 680 |
| Package dimensions (mm) | 2.9 × 2.8 × 1.9 |
It is ≤ 350 mV when IC = -500 mA and IB = -25 mA.
The transistor’s hFE ranges from 270 to 680.
The package measures 2.9 mm × 2.8 mm × 1.9 mm.