The RPT-34PB3F is a silicon planar phototransistor produced by ROHM, with high sensitivity.
The RPT-34PB3F is a silicon planar phototransistor from ROHM, intended for optical control equipment and compatible with the ROHM SIR-34ST3F infrared LED. The document lists its key electrical and optical parameters, maximum ratings, and typical application circuits.
Key specifications include a collector‑emitter voltage of 32 V, collector current up to 30 mA, and operation over a temperature range of –25 °C to +85 °C. Electrical characteristics such as light current, dark current, and spectral sensitivity are also detailed.
| Collector‑emitter voltage (VCEO) | 32 V |
|---|---|
| Emitter‑collector voltage (VCEO) | 5 V |
| Collector current (Ic) | 30 mA |
| Collector power dissipation (Po) | 150 mW |
| Operating temperature range | -25 °C to +85 °C |
| Storage temperature range | -30 °C to +485 °C |
| Light current (typical) | 2.0 mA |
| Dark current (max) | 0.5 pA |
| Peak sensitivity wavelength | 800 nm |
| Half‑angle | 36° |
It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode.
The maximum collector current is 30 mA.
It operates from –25 °C to +85 °C.
The dark current is specified as 0.5 pA.