This document describes the features and characteristics of a medium power transistor called 2SB1561. The transistor has low saturation voltage, high voltage and power handling capabilities, and is complementary to 2SD2391.
The ROHM 2SB1561 is a medium‑power NPN transistor rated for up to –60 V collector‑emitter voltage and –2 A collector current. It features a low saturation voltage of about –0.15 V at 1 A/–50 mA and is supplied in an MPT3 (40 × 40 × 0.7 mm) ceramic package.
The datasheet lists absolute maximum ratings such as 2 W power dissipation, 150 °C junction temperature, and storage range from –55 °C to +150 °C. Electrical characteristics include a transition frequency of 200 MHz and an output capacitance of 23 pF.
| Collector‑emitter voltage (Vceo) | -60 V |
|---|---|
| Power dissipation (Pc) | 2 W |
| Junction temperature (Tj) | 150 °C |
| Storage temperature (Tstg) | -55 to +150 °C |
| Transition frequency (fT) | 200 MHz |
| Output capacitance (Cob) | 23 pF |
The maximum collector‑emitter voltage is –60 V.
The device is rated for 2 W power dissipation.