2SB1590K is a low voltage high power NPN transistor from Toshiba. It has a maximum collector current of -1A and a typical saturation voltage of only -0.3V. The transistor is available in a SOT-323 package with external dimensions of 2.8mm*1.6mm*0.4mm.
The 2SB1590K is a power transistor designed for low saturation voltage operation (VCE(sat) ≤ ‑0.3 V) with a collector‑emitter voltage rating of ‑15 V and a continuous collector current of 1 A. It is offered in an SMT3 surface‑mount package and is intended for use in audio‑visual, office‑automation, communications, and general electronic equipment.
The datasheet lists absolute maximum ratings, typical electrical parameters, and characteristic curves, including a transition frequency of 200 MHz and a junction temperature limit of 150 °C. Packaging details, ordering units, and legal notices are also provided.
| Collector‑emitter voltage (VCEo) | -15 V |
|---|---|
| Saturation voltage (VCE(sat)) | -0.3 V |
| Transition frequency (ft) | 200 MHz |
| Junction temperature (Tj) | 150 °C |
The transistor can withstand up to ‑15 V between collector and emitter.
It is supplied in an SMT3 surface‑mount package.
The device can be stored from ‑55 °C to +150 °C.