RPT-37PB3F is a phototransistor produced by ROHM with high sensitivity and resistance to external stray light interference, suitable for applications such as optical control equipment and sensors.
The RPT-37PB3F phototransistor is a silicon planar device molded in plastic with a visible‑light filter, offering high sensitivity and almost no effect from stray light. It is suited for optical control equipment and sensor receivers, and can be paired with the ROHM SIR-34ST3F infrared LED.
Key specifications include a collector‑emitter voltage rating of 32 V, collector current up to 30 mA, power dissipation of 150 mW, and an operating temperature range from –25 °C to 485 °C. Electrical and optical characteristics such as dark current (0.5 pA), peak sensitivity wavelength (800 nm), response time (10 ps), and half‑angle (36°) are also provided.
| Collector‑emitter voltage (Vceo) | 32 V |
|---|---|
| Collector current (Ic) | 30 mA |
| Power dissipation (Po) | 150 mW |
| Operating temperature (Topr) | -25 °C to 485 °C |
| Peak sensitivity wavelength | 800 nm |
| Dark current (Ico) | 0.5 pA (max) |
| Response time | 10 ps |
| Half‑angle | 36° |
The device is rated for a collector‑emitter voltage of 32 V.
The dark current is specified up to 0.5 pA at Vce = 10 V.
It can operate from –25 °C up to 485 °C.