This document describes the features and characteristics of the 2SB1316 power transistor, including the Darlington connection for high DC current gain, built-in resistor between base and emitter, and built-in damper diode.
The 2SB1316 is a Darlington‑connected power transistor designed for high DC current gain, featuring a built‑in base‑emitter resistor and damper diode. It is intended for use in general‑purpose electronic equipment such as audio‑visual, office, and communication devices.
The document lists absolute maximum ratings, detailed electrical characteristics, and packaging specifications, along with typical application curves and safety notices. These data help designers select appropriate operating conditions and ensure reliable performance.
| Collector‑emitter voltage | -100 V |
|---|---|
| Collector current | 2 A |
| Transition frequency (fT) | 50 MHz |
| Output capacitance (Cob) | 35 pF |
The maximum collector‑emitter voltage is -100 V.
The transistor can handle up to 2 A of collector current.
The transition frequency is specified as 50 MHz.