The RPT-38PB3F is a silicon planar phototransistor with high sensitivity and almost no effect from stray light. It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode in optical control equipment and receiver for sensors.
The RPT-38PB3F is a silicon planar phototransistor molded in plastic with a visible‑light filter, giving it high sensitivity and minimal stray‑light effect. It is intended for optical control equipment and sensor receivers, and is especially suited for use with the ROHM SIR-34ST3F infrared LED.
Key specifications include a collector‑emitter voltage rating of 32 V, collector current up to 30 mA, power dissipation of 150 mW, and an operating temperature range from –25 °C to 485 °C. Electrical and optical characteristics such as light current, dark current, peak sensitivity wavelength (800 nm), and response time are also detailed.
| Collector‑emitter voltage (Vceo) | 32 V |
|---|---|
| Collector current (Ic) | 30 mA |
| Power dissipation (Po) | 150 mW |
| Operating temperature (Topr) | -25 °C to 485 °C |
| Storage temperature (Tsig) | -30 °C to +85 °C |
| Light current (typical) | 2.0 mA (Voe=5 V, E=500 lx) |
| Dark current (typical) | 0.5 pA (Vce=10 V) |
| Peak sensitivity wavelength | 800 nm |
The device is rated for a collector‑emitter voltage of 32 V.
The typical light current is 2.0 mA under those conditions.
It can operate from –25 °C up to 485 °C.
It is particularly suited for use with the ROHM SIR-34ST3F infrared LED.