2SB1260 / 2SB1181 are power transistors produced by ROHM. They have high breakdown voltage and high current, good hFE linearity, low VCE(sat) and other features.
The ROHM 2SB1181 is a silicon power transistor rated for up to –80 V collector‑emitter voltage and 1 A continuous collector current. The sheet lists absolute maximum ratings, electrical characteristics, and typical application curves.
Packaging information, ordering codes, and handling notes are provided, along with legal notices and contact details for further product information.
| Collector‑emitter breakdown voltage (Vceo) | -80 V |
|---|---|
| Collector current (Ic) continuous | 1 A |
| Collector‑emitter saturation voltage (Vce(sat)) | 0.4 V |
| Power dissipation | 2 W |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Transition frequency (fT) | 100 MHz |
| Package type | QR |
The maximum collector‑emitter voltage is –80 V.
The transistor can operate up to a junction temperature of 150 °C.
Store the device between –55 °C and +150 °C.
The transition frequency is specified as 100 MHz.