This document describes the features and characteristics of the 2SB1197K low frequency PNP silicon transistor. It includes features such as low VCE(sat) of 0.5V, maximum current of 0.8A, and complementarity with 2SD1781K.
This datasheet describes the ROHM 2SB1197K low‑frequency PNP transistor, including its key features, external dimensions, and planar epitaxial structure. It also lists the absolute maximum ratings and detailed electrical characteristics such as voltage limits, current capability, and power dissipation.
Additional sections cover packaging specifications, typical characteristic curves, and legal notes regarding export control and usage restrictions. The document is intended for designers who need reference data for circuit design and component selection.
| Collector‑emitter voltage (VCEO) | -32 V |
|---|---|
| Collector current (IC) | 0.8 A |
| Collector power dissipation (P0) | 0.2 W |
| Junction temperature (Tj) | 150 °C |
| Storage temperature (Ts) | -55 to 150 °C |
| Transition frequency (fT) | 200 MHz |
| Output capacitance (Cob) | 12‑30 pF |
The maximum collector‑emitter voltage is -32 V.
The transistor can handle up to 0.8 A of collector current.
The device can be stored from –55 °C up to 150 °C.
The transition frequency is specified as 200 MHz.