This document is the datasheet of K4B4G0446B K4B4G0846B, which introduces the features and characteristics of the product, including product model, package type, pin arrangement, operating temperature, voltage range, storage capacity and other information.
This datasheet provides detailed specifications for Samsung's K4B4G0446B 4‑Gb DDR3 SDRAM B‑die device. It includes ordering information, key features, package pinout, mechanical dimensions, and electrical characteristics such as voltage, timing, and power consumption.
The document also describes the supported speed grades (DDR3‑800 to DDR3‑1866), package type (78‑ball FBGA), and compliance information (lead‑free, halogen‑free, RoHS). It is intended for designers and engineers who need precise parameters for board layout and system integration.
| Density | 4 Gb |
|---|---|
| Package Type | 78‑ball FBGA (x4 / x8) |
| Supply Voltage | 1.5 V + 0.075 V |
| Supported Speed Grades | DDR3‑800 to DDR3‑1866 |
| Number of Banks | 8 |
| Pre‑fetch Size | 8‑bit |
| RoHS Compliance | Lead‑free & Halogen‑free |
The device operates from a 1.5 V + 0.075 V power supply.
It is supplied in a 78‑ball FBGA package, available in x4 and x8 configurations.
The part supports DDR3‑800 up to DDR3‑1866 data rates.
The SDRAM contains eight banks.