This datasheet provides detailed information about 2Gb C-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant), including product specifications, performance, applications, etc.
The Samsung K4B2G0846C is a 2 Gb DDR3 SDRAM device built on a C‑die architecture. It is offered in a 78‑ball FBGA package (x8) and complies with RoHS requirements. The part supports DDR3‑800 to DDR3‑1600 speeds and provides programmable CAS latency values from 5 to 11.
Key functional features include 8‑bit pre‑fetch, 8 banks, on‑die termination (ODT), internal self‑calibration via the ZQ pin, and a standard 1.5 V + 0.075 V power supply. The datasheet also lists absolute maximum ratings, timing parameters, and detailed pin‑out diagrams.
| Density | 2 Gb DDR3 SDRAM (C‑die) |
|---|---|
| Package | 78‑ball FBGA (x8) |
| Organization (K4B2G0846C) | 256 Mbit × 8 |
| Supported DDR3 Speeds | DDR3‑800, DDR3‑1066, DDR3‑1333, DDR3‑1600 |
| Voltage | 1.5 V + 0.075 V (Vdd and Vppa) |
| CAS Latency (programmable) | 5 – 11 |
| Banks | 8 |
| Prefetch | 8‑bit |
| On‑Die Termination | Supported via ODT pin |
It is supplied in a 78‑ball FBGA package (x8).
The device supports DDR3‑800, DDR3‑1066, DDR3‑1333 and DDR3‑1600.
It operates from a 1.5 V + 0.075 V power supply.
The SDRAM contains eight banks.