This document provides information and specifications of Samsung Electronics' DDR3 SDRAM products K4B2G0446D and K4B2G0846D. The products have a capacity of 2Gb and are manufactured using the D-die process. They are RoHS compliant, lead-free and halogen-free. The products are suitable for various applications, but not intended for use in life support, medical, safety equipment, military or defense applications.
The Samsung K4B2G0846D is a 2 Gb DDR3 D‑die SDRAM offered in a 78‑ball FBGA package (x4 and x8). It operates from a single 1.5 V + 0.075 V power supply and supports JEDEC‑standard DDR3 data rates from 800 MT/s up to 1866 MT/s.
The datasheet provides detailed pin‑out diagrams, mechanical dimensions, electrical characteristics, timing parameters, and IDD current specifications for designers integrating this memory into high‑performance applications.
| Capacity | 2 Gb DDR3 D‑die SDRAM |
|---|---|
| Package | 78‑ball FBGA (x4 / x8) |
| Operating Voltage | 1.5 V + 0.075 V |
| Supported Speed Grades | DDR3‑800 to DDR3‑1866 |
| CAS Latency Range | 6 – 13 |
| Number of Banks | 8 |
The device operates with a single 1.5 V + 0.075 V power supply.
It is available in a 78‑ball FBGA package, both x4 and x8 configurations.
It supports DDR3 speeds from 800 MT/s up to 1866 MT/s.
The SDRAM contains eight banks.