K4B1G0446G K4B1G0846G is a 1Gb G-die DDR3 SDRAM 78FBGA memory supporting lead-free and halogen-free (RoHS compliant)
The document provides a complete technical description of Samsung’s 1 Gb DDR3 G‑die SDRAM parts K4B1G0446G (x4) and K4B1G0846G (x8). It includes ordering information, key features, package dimensions, pin‑out diagrams, electrical characteristics, timing parameters, and maximum ratings.
The data sheet also lists supported speed grades (DDR3‑800 to DDR3‑1866), voltage requirements (1.5 V + 0.075 V), and programmable latency options, making it a reference for board designers and system engineers.
| Device density | 1 Gb DDR3 G‑die |
|---|---|
| Package type | 78‑ball FBGA (x4 / x8) |
| Operating voltage | 1.5 V + 0.075 V |
| Supported speed grades | DDR3‑800 to DDR3‑1866 |
| Programmable CAS latency | 5‑13 (selected values: 5,6,7,8,9,10,11,13) |
Both parts are offered in a 78‑ball FBGA package, available in x4 and x8 pin configurations.
The devices operate from a 1.5 V supply with an additional 0.075 V offset.
The parts support DDR3‑800, DDR3‑1066, DDR3‑1333, DDR3‑1600 and DDR3‑1866.
CAS latency can be programmed to values from 5 up to 13, including 5,6,7,8,9,10,11,13.