This datasheet provides specifications of Samsung 1Gb E-die DDR3 SDRAM 60FBGA and 84FBGA, including pin diagram, pin description, electrical parameters, package dimension, performance parameters, function description, application suggestion etc.
The Samsung K4B1G1646E is a 1 Gb E‑die DDR3 SDRAM offered in 78‑ball FBGA (x4/x8) and 96‑ball FBGA (x16) packages. It supports standard DDR3 speeds from 800 MT/s up to 1600 MT/s and operates from a 1.5 V + 0.075 V supply.
The datasheet provides detailed pin‑out diagrams, mechanical dimensions, electrical characteristics, timing parameters, and IDD current specifications. All information is supplied on an "AS IS" basis and the device is RoHS‑compliant (lead‑free and halogen‑free).