This document is a specification sheet for Samsung Electronics DDR3 SDRAM products, describing the features and characteristics of the products.
The K4B1G0846F is a 1 Gb F‑die DDR3 SDRAM organized as 32 Mbit × 4 or 16 Mbit × 8 with eight banks. It supports speed grades from DDR3‑800 up to DDR3‑1600 and offers programmable CAS latency, additive latency, and on‑die termination. The device operates from a single 1.5 V + 0.075 V supply and is lead‑free and halogen‑free (RoHS compliant).
The handbook details the 78‑ball FBGA package (x4/x8), pin assignments, mechanical dimensions, absolute maximum ratings, AC/DC operating conditions, input/output measurement levels, IDD current specifications, and timing parameters for each speed grade. It also includes tables for ordering information, key features, and electrical characteristics.
| Density | 1 Gb |
|---|---|
| Package | 78‑ball FBGA (x4/x8) |
| Operating Voltage | 1.5 V + 0.075 V |
| Speed Grades | DDR3‑800, DDR3‑1066, DDR3‑1333, DDR3‑1600 |
| CAS Latency (programmable) | 5 – 11 |
| Banks | 8 |
| Pre‑fetch | 8‑bit |
| RoHS Compliance | Lead‑free and halogen‑free |
It uses a 78‑ball FBGA package available in x4 and x8 configurations.
The device supports DDR3‑800, DDR3‑1066, DDR3‑1333, and DDR3‑1600 speed grades.
Yes, it is lead‑free and halogen‑free, meeting RoHS requirements.
It operates from a single 1.5 V + 0.075 V power supply.