The VSMF3710 is a high-speed infrared emitting diode with high radiant power and high speed, suitable for high pulse current operation. It uses GaAlAs double hetero (DH) technology and is molded in a PLCC-2 package for surface mounting (SMD).
The VSMF3710 is a high‑speed infrared emitting diode built with GaAlAs double‑heterojunction technology. It delivers 890 nm wavelength, high radiant power, and a modulation bandwidth of 12 MHz, packaged in a surface‑mount PLCC‑2 form factor.
The document provides electrical ratings, mechanical dimensions, packaging details, and handling instructions, including absolute maximum ratings, basic characteristics, and moisture‑sensitivity handling for tape‑and‑reel shipments.
| Peak wavelength | 890 nm |
|---|---|
| Package type | PLCC‑2 (surface‑mount) |
| Package dimensions (L×W×H) | 3.5 mm × 2.8 mm × 1.75 mm |
| Forward voltage (typical, 100 mA, 20 ms) | 1.4 V – 1.6 V |
| Maximum forward current (continuous) | 100 mA |
| Power dissipation | 160 mW |
| Modulation bandwidth | 12 MHz |
| Angle of half intensity | ± 60° |
The VSMF3710 emits infrared light at a peak wavelength of 890 nm.
The diode is rated for a continuous forward current of 100 mA.
The device supports a modulation bandwidth of 12 MHz.
It is supplied in a surface‑mount PLCC‑2 package.