STW20NM50 is an N-channel power MOSFET with low on-resistance, high dv/dt, and excellent avalanche characteristics. It is suitable for increasing power density of high voltage converters, enabling system miniaturization and higher efficiencies.
The STW20NM50 is a 500 V, 20 A N‑channel power MOSFET in a TO‑247 package, featuring the MDmesh™ technology for low on‑resistance and high dv/dt performance. It is suited for high‑voltage converters where power density and efficiency are critical.
The document provides absolute maximum ratings, thermal data, avalanche characteristics, detailed electrical parameters, switching behavior, and mechanical dimensions, along with legal and safety notices from STMicroelectronics.
| Drain‑source Voltage (Vds) | 500 V |
|---|---|
| Continuous Drain Current (Id) | 20 A |
| Pulsed Drain Current (Id,pulse) | 80 A |
| Typical On‑Resistance (Rds(on)) | 0.202 Ω |
| Total Power Dissipation | 214 W |
| Thermal Resistance Junction‑case | 0.585 °C/W |
The device can handle a repetitive or non‑repetitive avalanche current of up to 10 A.
The storage temperature range is –65 °C to 150 °C.
The gate threshold voltage is typically between 3 V and 5 V.