Philips HEF4104B MSI Quadruple Low-to-High Voltage Translator Datasheet

The HEF4104B is a quadruple low-voltage to high-voltage translator with 3-state outputs, providing the capability of interfacing low-voltage circuits to high-voltage circuits, such as low-voltage LOCMOS and TTL to high-voltage LOCMOS.


Philips HEF4104B MSI Quadruple Low-to-High Voltage Translator Datasheet - cover page
Brand
Philips
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
5
File format
PDF
File size
73 KB
Published
09 May, 2012
Updated
30 September, 2023
MD5 checksum
42C0BA093403D8449F3D29CFE9AE4B99

About this manual

The HEF4104B is a quadruple low‑to‑high voltage translator that provides four data inputs and four data outputs with 3‑state capability, allowing interfacing of low‑voltage logic (e.g., TTL, LOCMOS) to high‑voltage circuits. It uses a common negative supply (Vss) and separate positive supplies for inputs (Vpp1) and outputs (Vppo), with Vpp1 required to be less than or equal to Vppo.

The device is offered in three package types: 16‑lead DIL plastic (SOT38‑1), 16‑lead DIL ceramic (SOT74), and 16‑lead SO plastic (SOT109‑1). Electrical characteristics include typical propagation delays of 80 ns (high‑to‑low) and 62 ns (low‑to‑high) and an input current limit of 10 mA per pin.

What's inside

  • Product specification
  • Description
  • Pinning
  • AC Characteristics
  • Package Options
  • Logic diagram

Specifications

Number of channelsQuadruple (4)
Output type3‑state outputs
Maximum input current per pin10 mA
Package – plastic DIL16‑lead DIL (SOT38‑1)
Package – plastic SO16‑lead SO (SOT109‑1)

Frequently asked questions

What does the HEF4104B do?

It translates low‑voltage signals to high‑voltage levels and provides 3‑state outputs for each channel.

How many data inputs and outputs are on the HEF4104B?

The device has four data inputs (I0‑I3) and four data outputs (O0‑O3) plus complementary outputs.

What is the input current limit for each pin?

Each input pin must be limited to a maximum of 10 mA.

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