This document introduces the features and characteristics of the VISHAY TSHA520 series high efficiency infrared emitting diodes, including high radiant power, high pulse current, standard T-1¾ (∅ 5 mm) package, peak wavelength λp = 875 nm, high reliability, good spectral matching, etc.
The TSHA520 series are high‑efficiency infrared emitting diodes built with GaAlAs on GaAlAs technology and packaged in a clear, untinted plastic case. They provide about 70 % more radiant power than standard GaAs devices and are suited for infrared remote‑control and free‑space transmission systems, especially when paired with PIN photodiodes or phototransistors.
The document lists absolute maximum ratings, electrical and optical characteristics, typical performance curves, package dimensions, and compliance information such as RoHS and ODS‑free policies. It also contains legal disclaimer and policy statements from Vishay Semiconductor GmbH. This manual is written in Chinese.
| Peak wavelength | 875 nm |
|---|---|
| Forward voltage (IF = 100 mA, tp = 20 ms) | 1.5 V – 1.8 V |
| Maximum forward current (pulse) | 1.5 A for 100 µs |
The peak wavelength is 875 nm.
It can handle up to 1.5 A for a 100 µs pulse (IFM 200 mA surge, IFSM 2.5 A for single pulse).
Yes, the components are lead‑free and comply with RoHS 2002/95/EC and WEEE 2002/96/EC.
The device operates from –55 °C to +100 °C ambient temperature.