TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, blue- grey tinted plastic packages. In comparison with the standard GaAs on GaAs tech- nology these emitters achieve about 100 % radiant power improvement at a similar wavelength. The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology. Therefore these emitters are ideally suitable as high performance replacements of standard emitters.
The TSAL4400 infrared emitting diode from Vishay is built with GaAlAs/GaAs technology and packaged in a clear, blue‑grey tinted plastic case. It offers about 100 % radiant‑power improvement over standard GaAs devices and is suitable for high‑pulse‑current applications such as remote‑control units and optical counters.
The datasheet provides electrical ratings, optical characteristics, mechanical dimensions, and compliance information, including RoHS‑lead‑free status and an ozone‑depleting‑substances policy. All parameters should be validated for each specific application.
| Peak Wavelength | 940 nm |
|---|---|
| Radiant Power | 35 mW @ 100 mA |
| Reverse Voltage | 5 V |
| Power Dissipation | 210 mW |
| Junction Temperature (max) | 100 °C |
| Operating Temperature Range | -55 °C to +100 °C |
| Thermal Resistance (junction‑ambient) | 350 K/W |
| Soldering Temperature | ≤260 °C (≤5 s, 2 mm from case) |
The peak wavelength is 940 nm.
The device can tolerate up to 5 V reverse voltage.
Yes, it is a lead‑free component and complies with RoHS 2002/95/EC.
Soldering should not exceed 260 °C and must be limited to 5 seconds, staying at least 2 mm away from the case.