This document describes the 5-line ESD protection diode array from Vishay Semiconductors, which features an ultra compact LLP75-6A package, 5-line ESD protection, surge immunity acc. IEC 61000-4-5 IPPM > 12 A, low leakage current IR < 1 µA, ESD-immunity acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge, working voltage range VRWM = 5 V, etc.
The GMF05C-HS3 is a 5‑line ESD‑protection diode array offered in an ultra‑compact LLP75‑6A package. It provides bidirectional, asymmetrical protection for up to five signal or data lines, with low leakage current and RoHS‑compliant, lead‑free construction.
Key electrical characteristics include a reverse working voltage of 5 V, a reverse breakdown voltage of 68 V, and a peak pulse current capability of 12 A. The device meets IEC 61000‑4‑2 ESD immunity of ±30 kV and IEC 61000‑4‑5 surge immunity greater than 12 A, making it suitable for high‑speed data interfaces.
| Package | LLP75‑6A |
|---|---|
| Number of protected lines | 5 lines |
| Reverse working voltage (VRWM) | 5 V |
| Reverse breakdown voltage (VBR) | 68 V |
| Surge immunity (IEC 61000‑4‑5) | > 12 A |
| ESD immunity (IEC 61000‑4‑2) | ±30 kV |
| Reverse clamping voltage (VC) at IPP = 12 A | 12.5 V |
| Forward clamping voltage (VF) at IPP = 12 A | 5.5 V |
The reverse working voltage (VRWM) is 5 V.
It can protect up to five signal or data lines simultaneously.
It meets IEC 61000‑4‑2 ESD immunity of ±30 kV for both contact and air discharge.
The device is supplied in an LLP75‑6A package.