ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T Dual Channel Optocoupler with Phototransistor Output, SOIC-8 package.
The ILD205T/206T/207T/211T/213T/217T series are dual‑channel optocouplers featuring a GaAs infrared LED and a silicon NPN phototransistor in a SOIC‑8 package. They provide high electrical isolation (3000 VRMS) and a wide collector‑emitter breakdown voltage of 70 V, making them suitable for high‑density surface‑mount applications.
The document lists absolute maximum ratings, electrical characteristics, switching performance, and package dimensions, along with environmental compliance statements and legal disclaimer information.
| Isolation test voltage | 3000 VRMS |
|---|---|
| Collector‑emitter breakdown voltage (BVCEO) | 70 V |
| Current Transfer Ratio (CTR) range – ILD205T | 40 % – 80 % |
| Current Transfer Ratio (CTR) range – ILD207T | 100 % – 200 % |
| Power dissipation per channel | 125 mW |
| Operating temperature range | -55 °C to +100 °C |
| Lead spacing | 0.05 in |
The isolation test voltage is 3000 VRMS.
The collector‑emitter breakdown voltage is 70 V.
The ILD207T has a CTR range of 100 % to 200 %.
They operate from –55 °C to +100 °C.