M5M51008DFP,VP,RV,KV,KR -55H, -70H 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM is a low power static random access memory produced by Mitsubishi Electric. It is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology and has high density and low power consumption. The device is packaged in a 32-pin thin small outline package, which is a high reliability and high density surface mount device (SMD).
The M5M51008D series (FP, VP, RV, KV, KR) is a 1‑Mbit (1048576‑bit) CMOS static RAM organized as 131072 words of 8 bits. It is fabricated with high‑performance quadruple‑polysilicon and double‑metal CMOS technology, offering low standby current and suitability for battery‑back‑up applications.
The device is supplied in a 32‑pin thin‑small‑outline (TSOP) package and operates from a 5 V supply (±10%). Key electrical characteristics include a standby current of a few microamps, operating temperature range of 0 °C to 70 °C, and read/write cycle times of 55 ns to 70 ns depending on the temperature grade (-55H or -70H).
| Memory size | 1 Mbit (1048576 bits) organized as 131072 words × 8 bits |
|---|---|
| Supply voltage (Vcc) | 5 V ±10% |
| Operating temperature range | 0 °C to 70 °C |
| Read cycle time | 55 ns (‑55H) to 70 ns (‑70H) |
| Write cycle time | 55 ns (‑55H) to 70 ns (‑70H) |
It provides 1 Mbit of storage organized as 131072 words of 8 bits each.