The PN4248, PN4249 and PN4250 are PNP silicon planar transistors designed for audio‑frequency low‑noise preamplifier applications. They are supplied in a TO‑92A case and are intended for use in circuits requiring low noise and stable small‑signal performance.
The document lists absolute maximum ratings, electrical characteristics, and small‑signal parameters such as breakdown voltages, saturation voltages, current gain, gain‑bandwidth product, and noise figure. Typical test conditions are at 25 °C unless otherwise noted.
| Collector‑Base Breakdown Voltage (V_CBO) | 40 V |
|---|---|
| Collector‑Emitter Breakdown Voltage (V_CEO) | 40 V |
| Emitter‑Base Breakdown Voltage (V_EBO) | 5 V |
| Collector‑Emitter Saturation Voltage (V_CE(sat)) at 10 mA | 0.25 V |
| DC Current Gain (hFE) – typical range | 50 – 1000 |
| Current Gain‑Bandwidth Product (f_T) | 40 MHz |
The PN4248 transistor has a collector‑base breakdown voltage of 40 V.
The PN4249 transistor exhibits a DC current gain (hFE) ranging from about 100 to 1000.