This document describes the features of the product designed for use in industrial-military power amplifier and switching circuit applications. It has high collector-emitter sustaining voltage, high DC current gain, low collector-emitter saturation voltage, and fast switching times.
The ON Semiconductor 2N6437 and 2N6438 are high‑power PNP silicon transistors designed for industrial and military power‑amplifier and switching applications. The datasheet provides maximum ratings, electrical and thermal characteristics, and package dimensions.
Key specifications include collector‑emitter sustaining voltage, continuous collector current, total power dissipation, and thermal resistance. Package information and ordering details are also listed.
| Collector‑Emitter Sustaining Voltage (VCE(sus)) | 100 V (2N6437) / 120 V (2N6438) |
|---|---|
| Maximum Collector‑Emitter Voltage (VCEO) | 100 V (2N6437) / 120 V (2N6438) |
| Continuous Collector Current (Ic) | 25 A |
| Total Device Dissipation (Pp) at 25 °C | 200 W |
| Thermal Resistance, Junction‑to‑Case (RθJC) | 0.875 °C·W |
They are supplied in CASE 1‑07, TO‑204AA (TO‑3) package.
The transistors can handle a continuous collector current of 25 A.
2N6437 is rated for 100 V and 2N6438 for 120 V collector‑emitter voltage.
The maximum power dissipation is 200 W at a case temperature of 25 °C.