LTE42008R is a NPN silicon planar epitaxial microwave power transistor produced by Philips. Its features include excellent common emitter class-A linear power amplifier performance and a maximum operating frequency of 4.2 GHz.
The Philips LTE42008R is an N‑type silicon planar epitaxial microwave power transistor offered in a SOT440A metal‑ceramic flange package. It is intended for common‑emitter class‑A linear power amplifiers up to 4.2 GHz and features diffused emitter ballasting resistors, gold metallization, and an input matching cell for easier circuit design.
The document provides detailed electrical limits, thermal characteristics, scattering parameters and application information, together with safety warnings concerning the beryllium‑oxide substrate and handling instructions.
| Storage Temperature Range | -65 °C to +200 °C |
|---|---|
| Maximum Junction Temperature (Tj) | 200 °C |
| Thermal Resistance Junction‑to‑Mounting‑Base (RθJB) | 12 K/W |
Thermal resistance values are given for a junction temperature of 70 °C.