The AS6C8008 is a 8,388,608-bit low power CMOS static random access memory organized as 1,048,576 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The AS6C8008 is well designed for very low power system applications, and particularly well suited for battery back-up nonvolatile memory application. The AS6C8008 operates from a single power supply of 2.7V ~ 5.5V and all inputs and outputs are fully TTL compatible.
This datasheet describes the AS6C8008 1024K × 8‑bit super low‑power CMOS SRAM. Key features include a fast 55 ns access time, low standby current of 6 µA, and operation from a single 2.7 V to 5.5 V supply. The device is offered in a 44‑pin TSOP‑II or 48‑ball TFBGA package and is suitable for battery‑backed non‑volatile memory applications.
The document contains detailed pin configurations, absolute maximum ratings, DC electrical characteristics, timing diagrams, package dimensions, and ordering information. It also includes legal notices and contact details for Alliance Memory, Inc.
| Access time | 55 ns |
|---|---|
| Supply voltage (VCC) | 2.7 V – 5.5 V |
| Operating temperature range | -40 °C to 85 °C |
| Package type | 44‑pin 400 mil TSOP‑II |
The SRAM operates from a single supply voltage of 2.7 V to 5.5 V.
The access time is 55 ns.
It is offered in a 44‑pin TSOP‑II package and a 48‑ball TFBGA package.