AS6C4008 is a low power CMOS static random access memory with a storage capacity of 4,194,304 bits and an organization of 524,288 words x 8 bits. It is fabricated using very high performance, high reliability CMOS technology. It operates from a single power supply of 2.7V ~ 5.5V . It has the characteristics of low power consumption and high reliability, and is suitable for battery backup and non-volatile memory applications.
The AS6C4008 SRAM provides 4,194,304 bits of static memory organized as 524,288 words of 8 bits. It operates from a single 2.7 V to 5.5 V supply and is designed for very low power consumption, making it suitable for battery‑backed non‑volatile memory applications. The device features tri‑state outputs, full static operation, and is compatible with standard 5 V and 3.3 V memory families.
Key electrical characteristics include a 55 ns access time, standby current of 4 µA, operating current of 30 mA/20 mA typ, and a data retention voltage of 2.0 V min. The chip is offered in several packages such as 32‑pin SOP, PDIP, TSOP‑I, sTSOP, and 36‑ball TFBGA, covering both commercial and industrial temperature ranges.
| Access time | 55 ns |
|---|---|
| Supply voltage | 2.7 V – 5.5 V |
| Standby current | 4 µA (typ) |
| Operating current | 30 mA / 20 mA (typ) |
| Input capacitance | ≤ 6 pF |
| Output high voltage (Voh) | ≥ 2.4 V |
The device operates from a single supply voltage of 2.7 V to 5.5 V.
The access time is specified as 55 ns.
The standby current is typically 4 µA.