AS6C8016 is a 8,388,608-bit low power CMOS static random access memory organized as 524,288 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The AS6C8016 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The AS6C8016 operates from a single power supply of 2.7V ~ 5.5V and all inputs and outputs are fully TTL compatible.
The AS6C8016 is a 512 K‑word by 16‑bit static RAM offering ultra‑low standby current and fast 55 ns access time. It operates from a single 2.7 V to 5.5 V supply and all I/O pins are TTL compatible, making it suitable for battery‑backed applications.
The device is offered in two package options—44‑pin TSOP‑II and 48‑ball TFBGA—with operating temperature from –40 °C to 85 °C. Detailed electrical characteristics, timing diagrams, and ordering information are provided in the following sections. This manual is written in Chinese.
| Memory organization | 524,288 words × 16 bits (8,388,608 bits) |
|---|---|
| Supply voltage (VCC) | 2.7 V – 5.5 V |
| Standby current (ISB1) | 6 µA typ. |
| Operating current (ICc) | 30 mA / 20 mA typ. |
The device operates from a single supply voltage of 2.7 V to 5.5 V.
Typical standby current is 6 µA.