The AT45DB161D is a 2.5-volt or 2.7-volt serial-interface sequential access Flash memory ideally suited for a wide variety of digital voice-, image-, program code- and data-storage applications. The AT45DB161D supports RapidS serial interface for applications requiring very high data transfer rates.
The AT45DB161D is a 2.5‑V or 2.7‑V serial‑interface DataFlash memory offering up to 66 MHz SPI‑compatible operation. It provides 4,096 pages of either 512 bytes or 528 bytes each, two SRAM buffers for simultaneous read/write, and low‑power consumption (7 mA active, 25 pA standby, 9 pA deep‑power‑down). The device includes hardware and software data‑protection features such as sector lockdown and a 128‑byte security register.
The document describes pin assignments, block diagram, memory hierarchy (sectors, blocks, pages), and the full set of read, write, and erase commands. Continuous array read modes (standard, high‑frequency, low‑frequency) allow fast sequential access, while buffer‑to‑memory programming supports both built‑in and external erase operations. Timing diagrams and command opcodes are provided for implementation.
| Supply Voltage | 2.5 V‑3.6 V or 2.7 V‑3.6 V |
|---|---|
| Maximum Clock Frequency | 66 MHz |
| Page Size | 512 Bytes or 528 Bytes per page |
| Memory Capacity | 17,301,504 bits (16 Mbit) |
| Number of Pages | 4,096 pages |
| Active Read Current | 7 mA typical |
| Standby Current | 25 pA typical |
| Deep Power‑Down Current | 9 pA typical |
| Program/Erase Cycles | 100,000 cycles per page (minimum) |
| Data Retention | 20 years |
It operates from a single supply of 2.5 V to 3.6 V or 2.7 V to 3.6 V.
The device supports up to 66 MHz clock frequency on the RapidS serial interface.
The memory array contains 4,096 pages, each 512 bytes or 528 bytes in size.
Each page is rated for a minimum of 100,000 program/erase cycles.