This document describes the Silicon NPN Triple Diffused Planar Transistor with model number 2SD2390, which is suitable for audio, series regulator, and general purpose applications. The transistor has a collector-base voltage of 160V, a collector-emitter voltage of 150V, an emitter-base voltage of 5V, a collector current of 10A, and a base current of 1A. Its electrical characteristics include a maximum collector leakage current of 100µA, a maximum emitter leakage current of 100µA, a minimum collector-emitter breakdown voltage of 150V, a minimum DC current gain of 5000, a maximum collector-emitter saturation voltage of 2.5V, a maximum base-emitter saturation voltage of 3.0V, a typical transition frequency of 55MHz, and a typical current gain of 95.
The 2SD2390 is a silicon NPN triple‑diffused planar Darlington transistor intended for audio, series regulator and general‑purpose applications. Its equivalent circuit and pin layout are shown at the beginning of the sheet.
Key specifications include a collector‑emitter breakdown voltage of 160 V, a maximum collector current of 10 A, and a power dissipation rating of 100 W at 25 °C. The device operates over a temperature range of –55 °C to +150 °C and features typical switching characteristics such as a VCE(sat) of about 2.5 V and a transition frequency in the MHz range.
| Collector‑Emitter Voltage (VCEO) | 160 V |
|---|---|
| Power Dissipation (P0) at 25 °C | 100 W |
| Operating Temperature Range | -55 °C to +150 °C |
| Collector‑Emitter Saturation Voltage (VCE(sat)) | ≈2.5 V |
The device is rated for a collector‑emitter voltage of 160 V.
The power dissipation rating is 100 W at a case temperature of 25 °C.
It operates from –55 °C to +150 °C.