The 2SB1560 is a bipolar transistor with an hFE rating of 5000 to 12000. It has typical IC-VCE characteristics, hFE-IC characteristics, hFE-IC temperature characteristics, IC-VBE temperature characteristics, VCE(sat)-IB characteristics and Pc-Ta derating characteristics.
The 2SB1560 is a silicon PNP epitaxial planar Darlington transistor intended for audio, series regulator and general‑purpose applications. The sheet provides absolute maximum ratings, electrical characteristics, and typical switching behavior.
Key data include collector‑emitter voltage limits, maximum collector current, power dissipation, junction temperature, and typical switching waveforms. Thermal and safe‑operating‑area graphs are also presented to aid design and reliability assessments.
| Maximum Collector Current (Ic) | 7 A |
|---|---|
| Maximum Power Dissipation (Pd) at 25 °C | 100 W |
| Maximum Junction Temperature (Tj) | 150 °C |
| Collector‑Emitter Saturation Voltage (Vce(sat)) | -12 V |
The device can handle up to 7 A of collector current.
It can dissipate up to 100 W when the case temperature is 25 °C.
The transistor is rated for a junction temperature up to 150 °C.
The typical VCE(sat) is –12 V.