Allegro SAP Series Darlington Transistor with Temperature Compensation Diodes Datasheet

This document introduces the SAP series of Darlington transistors, which feature built-in temperature compensation diodes and emitter resistors, real-time temperature compensation, and symmetrical design for PNP and NPN pinouts. These products are suitable for audio amplifier applications.


Allegro SAP Series Darlington Transistor with Temperature Compensation Diodes Datasheet - cover page
Brand
Allegro
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
6
File format
PDF
File size
136 KB
Published
07 May, 2012
Updated
29 September, 2023
MD5 checksum
71CAD66B76C452ADC64CEC0C530372B4

About this manual

The SAP series Darlington transistors from Allegro incorporate built‑in temperature‑compensation diodes and an emitter resistor in a single package, reducing part count and simplifying assembly for audio‑amplifier designs. Real‑time temperature compensation stabilizes the idle current and helps prevent thermal runaway.

The datasheet provides electrical characteristics, recommended operating conditions, and guidelines for adjusting the idle current with an external variable resistor. It also details the destruction capacity of the built‑in resistor and outlines application notes for parallel push‑pull configurations.

What's inside

  • Features
  • Application Information
  • External Variable Resistor
  • Temperature Compensation Diode Characteristics
  • Parallel Push‑Pull Application
  • Emitter Resistor Destruction Capacity
  • Electrical Characteristics
  • Dimensions and Weight

Specifications

Weight≈ 8.3 g
Absolute Maximum Vceo160 V

Frequently asked questions

How is the idling current adjusted?

By adding a variable resistor (VR) between the diode terminals; the resistor (0 – 2000 Ω) is set so the idling current reaches about 40 mA.

What is the purpose of the built‑in temperature compensation diodes?

They are mounted on the chip to detect temperature rises directly and stabilize the idle current, preventing thermal runaway.

What is the destruction capacity of the built‑in emitter resistor?

For SAP08P/N the resistor is polysilicone; for SAP10P/N and SAP15P/N it is a thick‑film resistor that may fail before the transistor under short‑circuit conditions.

What are the recommended operating conditions for the diodes?

Set the forward current through the diodes to 2.5 mA and adjust the idle current to 40 mA using the external variable resistor.

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